View SS6611_2916066.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

www.siliconstandard.com 1 of 16 ss6610/11 re v . 2.01 11/06/2003 high efficiency synchronous step-up dc/dc converter features high efficiency. (93% when v in =2.4v, vout=3.3v, i out =200ma) output current up to 500ma. (ss6610 at vin=2.4v and v out =3.3v) quiescent supply current of 20ma. power-saving shutdown mode (0.1 a typical). internal synchronous rectifier (no external diode required). on-chip low-battery detec tor. low battery hys teresis space-saving package: msop- 8 applications palmtop & notebook computers . pdas wir eless phones pocket organizers. digital cameras. hand-held devices with 1 to 3 cells of nimh/nicd batteries. description the ss6610/SS6611 are high-efficiency step-up dc/dc converters, with a start-up voltage as low as 0.8v, and an operating voltage down to 0.7v. consuming only 20a of quiescent current, these devices include a built-in synchronous rec- tifier that reduces size and cost by eliminating the need for an external schottky diode, and improves overall efficiency by minimizing losse s. the switching frequency can range up to 500khz depending on the load and input volt- age. the output voltage can be easily set; by two external resistors or 1.8v to 5.5v; con- necting fb to out to get 3.3v; or connecting to gnd to get 5.0v. the peak cu rrent of the internal switch is fixed at 1.0a (ss6610) or 0.65a (SS6611) for design flexibility. typical application circuit output 3.3v, 5.0v or adj. (1.8v to 5.5v) up to 300ma low-batt ery detect out ss6610 SS6611 out fb gnd ref lbo shdn lx lbi + on off + low battery detection 0.1f v in 22h 47f 47f
www.siliconstandard.com 2 of 16 re v . 2.01 11/06/2003 ordering information ss6610cx xx SS6611cx xx msop-8 top view gnd 1 3 4 2 8 6 5 7 out lbi lbo ref lx shdn fb example: ss6610cotr ? in msop-8 package supplied on tape and reel packing tr: tape and reel package type o: msop-8 absolute maximum ratings supply voltage (out to gnd) 8.0v switch voltage (lx to gnd) v out + 0.3v , lbo to gnd 6.0v lbi, ref, fb, to gnd v out +0.3v switch current (lx) -1.5a to +1.5a output current (out) -1.5a to +1.5a operating temperature range -40 q c ~ +85 q c storage temperature range -65 q c ~150 q c test circuit ref er to typic al application circuit. shdn pin configuration ss6610/11
www.siliconstandard.com 3 of 16 re v . 2.01 11/06/2003 electrical characteristics (v in = 2.0v, v out = 3.3v (fb = v out ), r l = v, t a = 25qc, un less otherwise specif ied.) parameter test conditions min. typ. max. unit minimum input voltage 0.7 v operating voltage 1.1 5.5 v start-up voltage r l =3k: (note1) 0.8 1.1 v start-up voltage tempco -2 mv/ q c output voltage range v in SS6611 0.50 0.65 0.85 a lx leakage current v lx =0v~4v; v out =5.5v 0.05 1 p a operating current into out (note 3) v fb = 1.4v , v out = 3.3v 20 35 p a shutdown current into out shdn = gnd 0.1 1 p a v out = 3.3v ,i load = 200ma 90 efficiency v out = 2v ,i load = 1ma 85 % ss6610/11
www.siliconstandard.com 4 of 16 re v . 2.01 11/06/2003 electrical characteristics (continued) parameter test conditions min. typ. max. unit lx switc h on -time v fb =1v , v out = 3.3v 2 4 7 p s lx switch off-time v fb =1v , v out = 3.3v 0.6 0.9 1.4 ps fb input current v fb = 1.4v 0.03 50 na lbi input current v lbi = 1.4v 1 50 na shdn input current v shdn = 0 or v out 0.07 50 na lbo low output voltage v lbi = 0, i sink = 1ma 0.2 0.4 p a lbo off leakage current v lbo = 5.5v, v lbi = 5.5v 0.07 1 lbi hystereisis 50 mv v il 0.2v out shdn input voltage v ih 0.8v out v note 1: start-up voltage operation is guaranteed without the addition of an external schottky diode between the input and output. note 2: steady-state output current indicates that the dev ice maintains output voltage regulation under load. note 3: device is bootstrapped (power to the ic comes from out). this correlates directly with the actual battery supply. ss6610/11
www.siliconstandard.com 5 of 16 re v . 2.01 11/06/2003 typical performance characteristics input battery current ( p a) input battery voltage (v) fig. 1 no-load battery current vs. input battery 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 20 40 60 80 100 120 140 160 v out =5v (fb=gnd) v out =3.3v (fb=out) shutdown current ( p a) supply voltage (v) fig. 2 shutdown current vs. supply voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0.0 0.1 0.2 0.3 0.4 0.5 fig. 3 start-up voltage vs. output current start-u p volta g e ( v ) 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v out =5.0v (fb=gnd) output current (ma) v out =3.3v (fb=out) fig. 4 turning point between ccm & dcm ccm/dcm boundary output current (ma) input voltage (v) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 50 100 150 200 250 300 350 400 v out =5.0v (fb=gnd) v out =3.3v (fb=out) l=22 p h c in =100 p f c out =100 p f fig. 5 efficiency vs. load current (ref. to fig.33) efficiency (%) 0.01 0.1 1 10 100 1000 0 10 20 30 40 50 60 70 80 90 100 v in =3.6v output current (ma) v in =2.4v v in =1.2v ss6610 (i limit =1a) v out =5.0v (fb=gnd) fig. 6 ripple voltage (ref. to fig.33) ripple voltage (mv) output current (ma) 0 50 100 150 200 250 300 350 400 450 500 550 600 650 0 20 40 60 80 100 120 140 160 180 200 220 v in =2.4v v in =1.2v v out =5.0v l=22 p h c in =47 p f c out =47 p f v in =3.6v ss6610 (i limit =1a) ss6610/11
www.siliconstandard.com 6 of 16 re v . 2.01 11/06/2003 typical performance characteristics (continued) fig. 7 ripple voltage (ref. to fig.33) ripple voltage (mv) output current (ma) 0 100 200 300 400 500 600 700 800 0 40 80 120 160 200 240 v in =2.4v v out =5.0v l=22 p h c in =100 p f c out =100 p f v in =3.6v v in =1.2v ss6610 (i limit =1a) fig. 8 efficiency vs. load current (ref. to fig.33) efficiency (%) output current (ma) 0.01 0.1 1 10 100 1000 0 10 20 30 40 50 60 70 80 90 100 v in =3.6v v in =1.2v v in =2.4v SS6611 (i limit =0.65a) v out =5.0v (fb=gnd) fig. 9 ripple voltage (ref. to fig.33) ripple voltage (mv) output current (ma) 0 50 100 150 200 250 300 350 400 450 500 550 0 20 40 60 80 100 120 140 160 v out =5.0v l=22 p h c in =47 p f c out =47 p f v in =3.6v v in =2.4v v in =1.2v SS6611 (i limit =0.65a) fig. 10 ripple voltage (ref. to fig.33) ripple voltage (mv) output current (ma) 0 100 200 300 400 500 600 0 20 40 60 80 100 120 v in =2.4v v in =1.2v v out =5.0v l=22 p h c in =100 p f c out =100 p f v in =3.6v SS6611 (i limit =0.65a) fig. 11 efficiency vs. load current (ref. to fig.32) (v) efficiency (%) output current (ma) 0.01 0.1 1 10 100 1000 0 10 20 30 40 50 60 70 80 90 100 v in =2.4v v in =1.2v ss6610 (i limit =1a) v out =3.3v (fb=out) fig. 12 ripple voltage (ref. to fig.32) ripple voltage (mv) output current (ma) 0 50 100 150 200 250 300 350 400 450 500 550 600 0 20 40 60 80 100 120 140 160 180 200 220 240 260 v in =1.2v v out =3.3v l=22 p h c in =47 p f c out =47 p f v in =2.4v ss6610 (i limit =1a) ss6610/11
www.siliconstandard.com 7 of 16 re v . 2.01 11/06/2003 typical performance characteristics (continued) fig. 13 ripple voltage (ref. to fig.32) ripple voltage (mv) output current (ma) 0 50 100 150 200 250 300 350 400 450 500 550 0 20 40 60 80 100 120 140 v out =3.3v c in =100 p f c out =100 p f v in =1.2v v in =2.4v ss6610 (i limit =1a) ss6610 (i limit =1a) fig. 14 efficiency vs. load current (ref. to fig.32) efficiency (%) output current (ma) 0.01 1 10 100 1000 0 10 20 30 40 50 60 70 80 90 100 v in =1.2v v in =2.4v SS6611 (i limit =0.65a) v out =3.3v (fb=out) fig. 15 ripple voltage (ref. to fig.32) ripple voltage (mv) output current (ma) 0 50 100 150 200 250 300 350 400 450 500 0 20 40 60 80 100 120 140 v out =3.3v l=22p h c in =47 p f c out =47 p f v in =1.2v v in =2.4v SS6611 (i limit =0.65a) fig. 16 ripple voltage (ref. to fig.32) ripple voltage (mv) output current (ma) 0 50 100 150 200 250 300 350 400 450 500 0 10 20 30 40 50 60 70 80 90 100 110 120 v out =3.3v l=22p h c in =100 p f c out =100 p f v in =1.2v v in =2.4v SS6611 (i limit =0.65a) fig. 17 reference voltage vs. temperature reference voltage (v) temperature ( qc) -40 -20 0 20 40 60 80 1.20 1.21 1.22 1.23 1.24 1.25 1.26 i ref =0 fig. 18 switch resistance vs. temperature resistance ( : ) temperature ( q c) - 60 - 40 -20 0 20 40 60 80 100 0. 00 0. 05 0. 10 0. 15 0. 20 0.25 0. 30 0.35 0. 4 0 0.45 0.50 p-channel n-channel v out =3.3v i lx =100ma ss6610/11
www.siliconstandard.com 8 of 16 re v . 2.01 11/06/2003 typical performance characteristics (continued) fig. 19 maximum output current vs. input voltage maximum out put current (ma) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0 100 200 300 400 500 600 700 800 input voltage (v) SS6611 (i limit =0.65a) ss6610 (i limit =1a) v out =3.3v (fb=out) input voltage (v) fig. 20 maximum output current vs. input voltage maximum out put current (ma) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 100 200 300 400 500 600 700 800 900 SS6611 (i limit =0.65a) ss6610 (i limit =1a) v out =5.0v (fb=gnd) fig. 21 inductor current vs. output voltage i lim ( a ) output voltage (v) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 ss6610 (i limit =1a) SS6611 (i limit =0.65a) supply voltage (v) fig. 22 switching frequency vs. supply voltage switching frequency fosc (khz) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 20 40 60 80 100 120 140 160 i out =100ma v out =5.0v v out =3.3v switching frequency fosc (khz) output current (ma) 1 10 100 1000 0 20 40 60 80 100 120 140 160 180 200 220 v in =2.4v v out =3.3v v in =1.2v v out =3.3v v in =2.4v v out =5v v in =3.6v v out =5v fig. 23 switching frequency vs. output current v in =2.4v v out =3.3v fig. 24 lx switching waveform ss6610/11
www.siliconstandard.com 9 of 16 re v . 2.01 11/06/2003 typical performance characteristics (continued) v in =2.4v v out =3.3v loading=200ma lx pin waveform inductor current v out ac couple fig. 25 heavy load waveform loading: 1ma l 200ma v in =2.4v v out =3.3v v out : ac couple fig. 26 load transient response v in =2.0v~3.0v v out =3.3v, i out =100ma v out fig. 27 line transient response v in fig. 28 exiting shutdown v out v shdn v out =3.3v c in =c out =47 p f fig. 29 exiting shutdown v shdn v out v out =3.3v c in =c out =100 p f fig. 30 exiting shutdown v shdn v out v out =5.0v c in =c out =47 p f ss6610/11
www.siliconstandard.com 10 of 16 re v . 2.01 11/06/2003 typical performance characteristics (continued) fig. 31 exiting shutdown v out v shdn v out =5.0v c in =c out =100 p f block diagram + - + - + - + - + 47 p f 47 p f c2 0.1 p f c1 vin c3 out l 47 p h lx fb ref gnd out c4 0. 1 p f q2 q1 lbo lbi shdn f/ f q r s reference voltage mirror max. on-time one shot minimum off-time one shot ss6610/11
www.siliconstandard.com 11 of 16 re v . 2.01 11/06/2003 pin descriptions pin 1: fb- connecting to out to get +3.3v output, connecting to gnd to get +5.0v output, or using a resistor network to set the output voltage from +1.8v to +5.5v. pin 2: lbi- low-battery comparator input. in- ternally set at +1.23v to trip. pin 3: lbo- open-drain low battery comparator output. output is low when v lbi is <1.23v. lbo is high impedance during shutdown. pin 4: ref- 1.23v reference voltage. bypass with a 0.1 p f capacitor. pin 5: shdn- shutdown input. high=operating, low=shutdown. pin 6: gnd- ground pin 7: lx- n-channel and p-channel power mosfet drain. pin 8: out- power output. out provides boot- strap power to the ic. application information overview the ss6610/11 series are high-efficiency, step-up dc/dc converters, featuring a built-in synchronous rectifier, which reduces size and cost by eliminating the need for an external schottky diode. the start-up voltage of the ss6610 and SS6611 is as low as 0.8v and it operates with an input voltage down to 0.7v. quiescent supply current is only 20 p a. the internal p-mosfet on-resistance is typically 0.3 : to improve overall efficiency by minimizing ac losses. the output voltage can be easily set; by two external resistors for 1.8v to 5.5v; connecting fb to out to get 3.3v; or connecting to gnd to get 5.0v. the peak current of the internal switch is fixed at 1.0a (ss6610) or 0.65a (SS6611) for design flexibility. the current limits of the ss6610 and SS6611 are 1.0a and 0.65a respectively. the lower current limit allows the use of a physically smaller inductor in space-sensitive applications. pfm control scheme a key feature of the ss6610 series is a unique minimum-off-time, constant-on-time, current-limited, pulse-frequency-modulation (pfm) control scheme (see block diagram) with ultra-low quiescent current. the peak current of the internal n-mosfet power switch can be fixed at 1.0a ss6610) or 0.65a (SS6611). the switch frequency depends on either loading conditions or input voltage, and can range up to 500khz. it is governed by a pair of one- shots that set a minimum off-time (1 ps ) and a maximum on-time (4 p s). synchronous rectification using the internal synchronous rectifier eliminates the need for an external schottky diode, reducing the cos t and board space. during the cycle of off- time, the p-mosfet turns on and shuts the n- mosfet off. due to the low turn-on resistance of the mosfet, the synchronous rectifier signif- cantly improves efficiency without an additional ex- ternal schottky diode. thus, the conversion effi- ciency can be as high as 93%. reference voltage the reference voltage (ref) is nominally 1.23v for excellent t.c. performance. in addition, the ref pin can source up to 100 p a to external circuit with good load regulation (<10mv). a bypass capacitor of 0.1 p f is required for proper operation and good performance. ss6610/11
www.siliconstandard.com 12 of 16 re v . 2.01 11/06/2003 shutdown the whole circuit is shutdown when shdn v is low. in shutdown mode, the current can flow from the battery to the output due to the body diode of the p-mosfet. voutfalls to approximately (vin - 0.6v) and lx remains high impedance. the capacitance and load at out de- termine the rate at which v out decays. shutdown can be pulled as high as 6v. regardless of the volt- age at out. selecting the output voltage v out can be simply set to 3.3v/5.0v by connecting the fb pin to out/gnd due to the use of an internal resis- tor divider in the ic (fig.32 and fig.33). in order to adjust output voltage, a resistor divider is connected to v out , fb, gnd (fig.34). vout can be calculated by the following equation: r5=r6 [(v out / v ref )-1] .....................................(1) where v ref =1.23v and v out ranges from 1.8v to 5.5v. the recommended r6 is 240k : . low-battery detection the ss6610 series contains an on-chip comparator with 50mv internal hysteresis (ref, ref+50mv) f or low battery detection. if the voltage at lbi falls below the internal reference voltage, lbo ( an open-drain out- put) sinks current to gnd. component selection 1. inductor selection an inductor value of 22 p h performs well in most applications. the ss6610 series also work with inductors in the 10 p h to 47 p h range. an inductor with higher peak inductor current creates a higher output voltage ripple (i peak
www.siliconstandard.com 13 of 16 re v . 2.01 11/06/2003 ripple voltage reduction two or three parallel output capacitors can sig- nificantly improve the output ripple voltage of the ss6610/11. the addition of an extra input ca- pacitor results in a stable output voltage. fig.38 shows the application circuit with the above fea- tures. fig.39 to fig.46 show the performance of fig. 38. application examples vout vin r4 100k : ss6610/11 c3 c1 l 22 p h 47 p f 47 p f 0.1 p f c 2 0.1 p f c4 low battery output r2 r1 lx ou t f b gnd ref lbi lb o shd n l: tdk slf7045t-22omr90 c1, c3: nippon tantalum capacitor 6mcm476mb2ter vout vin r4 100k : ss6610/11 c3 c1 47 p f 47 p f 0.1 p f c2 0.1 p f c4 low battery output r2 r1 ou t f b gnd ref lbi lb o shd n l 22 p h lx l: tdk slf7045t-22omr90 c1, c3: nippon tantalum capacitor 6mcm476mb2ter fig. 32. v out = 3.3v application circuit. fig. 33. v out = 5.0v application circuit. vout vin 100k : r4 47 p f 47 p f 0.1 p f 0.1 p f low battery output c2 c4 c3 c1 ss6610/1 1 r6 r5 r2 r1 shdn l x fb lbo gnd ref lbi out l 22 p h l: tdk slf7045t-22omr90 c1, c3: nippon tantalum capacitor 6mcm476mb2ter v out =v ref *(1+r5/r6) fig. 34 an adjustable output application circuit ss6610/11
www.siliconstandard.com 14 of 16 re v . 2.01 11/06/2003 fig. 35. top lay er fig. 36. bottom lay er fig. 37. placement r1 r2 r3 r4 100k r6 v in lbi lbo v in r5=0 ? ? efficiency (%) output current (ma) 0.01 0.1 1 10 100 1000 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100 v out =5.0v l=22 v in =1.2v v in =2.4v v in =3.6v ss6610 (i limit =1a) fig. 40 ripple voltage (ref. to fig.38) ripple voltage (mv) output current (ma) 0 100 200 300 400 500 600 700 0 10 20 30 40 50 60 v out =5.0v l=22 v in =2.4v v in =3.6v v in =1.2v ss6610 (i limit =1a) iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j iiiiiiiiiiiiiiiiii9915h,j ss6610/11
www.siliconstandard.com 15 of 16 re v . 2.01 11/06/2003 fig. 41 efficiency (ref. to fig.38) efficiency (%) output current (ma) 60 0.01 0.1 1 10 100 1000 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 v out =5.0v l=22
www.siliconstandard.com 16 of 16 in formation furnished by silicon standard corporation is believed to be accurate and reliable. however, silicon standard corporation makes no guarantee or warranty, expre ss or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. silicon standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. no license is granted, whether expressly or by im plication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of silicon standard corporation or any third parties. re v . 2.01 11/06/2003 physical dimension ss6610/11

▲Up To Search▲

Price & Availability of SS6611

	To Download SS6611 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .